1 maximum ratings emitter reverse voltage .............................................................................. 60 ma surge forward current (t p 10 m s)..................................................... 2.5 a total power dissipation .................................................................. 100 mw detector collector-emitter voltage..................................................................... 70 v emitter-collector voltage........................................................................ 7 v collector current ............................................................................... 50 ma collector current (t p 1 ms) ............................................................. 100 ma total power dissipation .................................................................. 150 mw package isolation test voltage between emitter and detector, refer to climate din 40046, part 2, nov. 74 ................................................................... 5300 vac rms creepage ......................................................................................... 3 7 mm clearance......................................................................................... 3 7 mm insulation thickness between emitter and detector....................... 0.4 mm comparative tracking index per din iec 112/vde0 303, part 1 .................................................... 175 isolation resistance v io =500 v, t a =25 c ................................................................... 3 10 12 w v io =500 v, t a =100 c ................................................................. 3 10 11 w storage temperature range ................................................ ?5 to +150 c ambient temperature range ............................................... ?5 to +100 c junction temperature........................................................................ 100 c soldering temperature (max. 10 s. dip soldering distance to seating plane 3 1.5 mm) ............................................. 260 c .255 (6.48) .268 (6.81) 1 2 4 3 .179 (4.55) .190 (4.83) pin one id .030 (.76) .045 (1.14) 4 typ. 1.00 (2.54) .130 (3.30) .150 (3.81) .020 (.508 ) .035 (.89) 10 3 ? .018 (.46) .022 (.56) .008 (.20) .012 (.30) .031 (.79) typ. .050 (1.27) typ. .300 (7.62) typ. .110 (2.79) .130 (3.30) .230 (5.84) .250 (6.35) .050 (1.27) 1 2 4 3 collector emitter anode/ cathode cathode/ anode dimensions in inches (mm) features high current transfer ratios at 5 ma: 50?00% at 1 ma: 45% typical (>13) low ctr degradation good ctr linearity depending on forward current isolation test voltage, 5300 vac rms high collector-emitter voltage, v ceo =70 v low saturation voltage fast switching times field-effect stable by trios (transparent ion shield) temperature stable low coupling capacitance end-stackable, .100"(2.54 mm) spacing high common-mode interference immunity (unconnected base) underwriters lab file #52744 vde 0884 available with option 1 smd option, see sfh6206 data sheet description the sfh620aa/agb features a high current transfer ratio, low coupling capacitance and high isolation voltage. these couplers have a gaas infrared emit- ting diode emitter, which is optically coupled to a sil- icon planar phototransistor detector, and is incorporated in a plastic dip-4 package. the coupling devices are designed for signal trans- mission between two electrically separated circuits. the couplers are end-stackable with 2.54 mm spac- ing. creepage and clearance distances of >8 mm are achieved with option 6. this version complies with iec 950 (din vde 0805) for reinforced insulation up to an operation voltage of 400 v rms or dc. sfh620aa/agb 5.3 kv trios optocoupler ac voltage input
2 sfh620aa/agb characteristics (t a =25 c) note: 1. still air, coupler soldered to pcb or base. current transfer ratio (i c /i f at v ce =5 v) and collector-emitter leakage current switching times (typical values) linear operation (saturated) description symbol unit condition emitter forward voltage v f 1.25 ( 1.65) v i f = 60 ma capacitance c 0 50 pf v r =0 v, f=1 mhz thermal resistance r thja 750 k/w detector capacitance c ce 6.8 pf v ce =5 v, f=1 mhz thermal resistance r thja 500 k/w package collector-emitter saturation voltage v cesat 0.25 ( 0.4) v i f =10 ma, i c =2.5 ma coupling capacitance c c 0.2 pf description aa agb unit i c / i f (i f = 5 ma) 50?00 100?00 % collector-emitter leakage current, i ceo v ce =10 v 10 ( 100) 10 ( 100) na turn-on time t on 2.0 m s turn-off time t off 25 m s r l =1.9 w v cc =5 v i c 47 w i f =5 ma
3 sfh620aa/agb figure 1. current transfer ratio (typ.) vs. temperature i f =10 ma, v ce =5 v figure 2. output characteristics (typ.) collector current vs. collector-emitter voltage t a =25 c figure 3. diode forward voltage (typ.) vs. forward current figure 4. transistor capacitance (typ.) vs. collector-emitter voltage t a =25 c, f=1 mh z figure 5. permissiable pulse handling capability. fwd. current vs. pulse width pulse cycle d=parameter, t a =25 c 20 15 10 0 5 pf c 10 -2 10 -1 10 -0 10 1 10 2 v v e c ce figure 6. permissible power dissipation vs. ambient temp. figure 7. permissible diode forward current vs. ambient temp.
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